dm c1029ufdb document number: ds 37710 rev. 2 - 2 1 of 9 www.diodes.com february 2015 ? diodes incorporated dm c1029ufdb new product complementary pair enhancement mode mosfet product summary device v (br)dss r ds(on) max i d max t a = +25c q1 n - channel 12 v 2 9 m ? @ v gs = 4.5 v 5. 6 a 3 4 m ? @ v gs = 2 .5v 5. 1 a 4 4 m ? @ v gs = 1 . 8 v 4. 5 a 6 5 m ? @ v gs = 1 .5v 3. 7 a q2 p - channel - 12 v 61 m ? @ v gs = - 4.5 v - 3.8 a 81 m ? @ v gs = - 2 .5 v - 3. 3 a 115 m ? @ v gs = - 1.8 v - 2.8 a 210 m ? @ v gs = - 1 .5 v - 2. 3 a description this mosfet has been designed to minimize the on - state resistance (r ds( on ) ) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. applications ? load switch ? power management functions ? portable power adaptors features ? low on - resistance ? low input capacitance ? low profile, 0. 6 mm max height ? totally lead - free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. green device (note 3) mechanical data ? case: u - dfn2020 - 6 ? case material: molded plastic, green molding compound. ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminals: finish nipdau over copper l eadframe. solderable per mil - std - 202, method 208 ? terminals conne ctions: see diagram below ? weight: 0.0065 grams ( a pproximate) ordering information (note 4 ) part number case packaging dmc1 0 29ufdb - 7 u - dfn2020 - 6 3000/tape & reel dmc1 0 29ufdb - 13 u - dfn2020 - 6 10 000/tape & reel note s: 1 . no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and antimony - free "green products are defined as those which contain < 900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. for packaging det ails, go to our website at http: //www.diodes.com/products/packages.html marking information date code key year 2014 2015 2016 2017 2018 201 9 20 20 code b c d e f g h month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d bottom view internal schematic 2d = product type marking code ym = date code marking y = year (ex: b = 20 14 ) m = month (ex: 9 = september) s 1 g 1 d2 s2 g2 d1 d2 pin1 n - channel mosfet p - channel mosfet u - dfn2020 - 6 d1 d 1 s 1 g 1 d 2 s 2 g 2 2d y m e4
dm c1029ufdb document number: ds 37710 rev. 2 - 2 2 of 9 www.diodes.com february 2015 ? diodes incorporated dm c1029ufdb new product maximum ratings (@ t a = +25c, unless otherwise specified.) characteristic symbol q1 n - channel q2 p - channel units drain - source voltage v dss 12 - 12 v gate - source voltage v gss 8 8 v continuous drain current (note 5 ) v gs = 4.5 v steady state t a = + 25 ? a = + 70 ? d 5. 6 4. 4 - 3.8 - 3. 0 a t < 5 s t a = + 25 ? a = + 70 ? d 7. 2 5. 8 - 5.0 - 4.0 a maximum continuous body diode f orward current (note 5 ) i s 1 - 1 a pulsed drain current ( 10 ? dm 20 - 15 a avalanche current (l = 0.1mh) i as 15 - 12 a avalanche energy (l = 0.1mh) e as 12 8 mj thermal characteristics characteristic symbol value units total power dissipation (note 5 ) steady state p d 1. 4 w t < 5 s 2. 2 thermal resistance, junction to ambient (note 5 ) steady state r ja 9 1 c/w t < 5 s 55 thermal resistance, junction to case r j c 20 operating and storage temperature range t j, t stg - 55 to + 150 c note: 5. device mounted on 1 x 1 fr - 4 pcb with high coverage 2oz. copper, single sided.
dm c1029ufdb document number: ds 37710 rev. 2 - 2 3 of 9 www.diodes.com february 2015 ? diodes incorporated dm c1029ufdb new product electrical characteristics q1 n - channel (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 6 ) drain - source breakdown voltage bv dss 12 gs = 0v, i d = 250a j = + 25c i dss a ds = 12 v, v gs = 0v gate - source leakage i gss gs = 8 v, v ds = 0v on characteristics (note 6 ) gate threshold voltage v gs( th ) 0.4 ds = v gs , i d = 250 a ds (on) 17 29 m gs = 4.5 v, i d = 5 a 20 34 v gs = 2 .5 v, i d = 4.6 a 24 44 v gs = 1.8 v, i d = 4.1 a 30 65 v gs = 1 .5 v, i d = 2 a diode forward voltage v sd gs = 0 v, i s = 1 a dynamic characteristics (note 7 ) input capacitance c iss ds = 6 v, v gs = 0v , f = 1.0mhz output capacitance c oss rss g ds = 0 v, v gs = 0v , f = 1mhz total gate charge ( v gs = 4.5 v ) q g ds = 6 v, i d = 6.5 a total gate charge ( v gs = 8 v ) gs gd d( on ) dd = 6 v, v gs = 4.5 v, r l = 1.2 , r g = 1 r d( off ) f electrical characteristics q2 p - channel (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 6 ) drain - source breakdown voltage bv dss - 12 gs = 0v, i d = - 250a j = + 25c i dss a ds = - 12 v, v gs = 0v gate - source leakage i gss gs = 8 v, v ds = 0v on characteristics (note 6 ) gate threshold voltage v gs( th ) - 0.4 ds = v gs , i d = - 250 a ds(on) 37 61 m gs = - 4.5 v, i d = - 3.6 a 47 81 v gs = - 2 .5 v, i d = - 3.2 a 63 1 15 v gs = - 1.8 v, i d = - 1 a 90 210 v gs = - 1 .5 v, i d = - 1 a diode forward voltage v sd gs = 0 v, i s = - 1 a dynamic characteristics (note 7 ) input capacitance c iss ds = - 6 v, v gs = 0v , f = 1.0mhz output capacitance c oss rss g ds = 0 v, v gs = 0v , f = 1mhz total gate charge ( v gs = - 4.5 v ) q g ds = - 6 v, i d = - 4.3 a total gate charge ( v gs = - 8 v ) gs gd d( on ) dd = - 6 v, v gs = - 4.5 v, r l = 1.6 , r g = 1 r d( off ) f notes: 6 . short duration pulse test used to minimize self - heating effect. 7 . guaranteed by design. not subject to product testing.
dm c1029ufdb document number: ds 37710 rev. 2 - 2 4 of 9 www.diodes.com february 2015 ? diodes incorporated dm c1029ufdb new product 0 0.01 0.02 0.03 0.04 0.05 1 3 5 7 9 11 13 15 17 19 21 r ds(on) , drain - source on - resistance ( ? ) i d , drain - source current (a) figure 3. typical on - resistance vs. drain current and gate voltage v gs =1.5v v gs =1.8v v gs =2.5v v gs =4.5v 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 0 1 2 3 4 5 i d , drain current (a) v ds , drain - source voltage (v) fig ure 1. typical output characteristic v gs =1.0v v gs =1.2v v gs =1.5v v gs =8.0v v gs =4.5v v gs =1.8v v gs =2.0v v gs =3.0v v gs =2.5v typical characteristics - n - channel 0 2 4 6 8 10 12 14 16 18 20 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 i d , drain current (a) v gs , gate - source voltage (v) figure 2. typical transfer characteristic v ds = 5.0v t a = - 55 t a =25 t a =150 t a =125 t a =85 0 0.02 0.04 0.06 0.08 0.1 1 2 3 4 5 6 7 8 r ds(on) , drain - source on - resistance ( ? ) v gs , gate - source voltage (v) figure 4. typical transfer characteristic i d =5.0a i d =4.6a i d =4.1a i d =2.0a 0.005 0.01 0.015 0.02 0.025 0.03 0 2 4 6 8 10 12 14 16 18 20 r ds(on) , drain - source on - resistance ( ? d, drain current(a) figure 5. typical on - resistance vs. drain current and temperature v gs = 4.5v t a = - 55 t a =25 t a =85 t a =125 t a =150 0.6 0.8 1 1.2 1.4 1.6 1.8 - 50 - 25 0 25 50 75 100 125 150 r ds(on) , drain - source on - resistance (normalized) t j , junction temperature ( ) figure 6. on - resistance variation with temperature v gs =2.5v, i d =3.0a v gs =4.5v, i d =5.0a
dm c1029ufdb document number: ds 37710 rev. 2 - 2 5 of 9 www.diodes.com february 2015 ? diodes incorporated dm c1029ufdb new product 0 0.005 0.01 0.015 0.02 0.025 0.03 0.035 0.04 - 50 - 25 0 25 50 75 100 125 150 r ds(on) , drain - source on - resistance ( ? j, junction temperature ( gs =2.5v, i d =3.0a v gs =4.5v, i d =5.0a 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 - 50 - 25 0 25 50 75 100 125 150 v gs(th), gate threshold voltage (v) t j , junction temperature ( d =250 a i d =1ma 0 2 4 6 8 10 12 14 16 18 20 0 0.3 0.6 0.9 1.2 1.5 i s , source current (a) v sd , source - drain voltage (v) figure 9. diode forward voltage vs. current v gs =0v t a =150 v gs =0v t a =125 v gs =0v t a =85 v gs =0v, t a = - 55 v gs =0v t a =25 10 100 1000 10000 0 2 4 6 8 10 12 c t , junction capacitance (pf) v ds , drain - source voltage (v) figure 10. typical junction capacitance f=1mhz c iss c oss c rss 0 2 4 6 8 0 5 10 15 20 v gs (v) qg (nc) figure 11. gate charge v ds =6v, i d =6.5a 0.01 0.1 1 10 100 0.01 0.1 1 10 100 i d , drain current (a) v ds, drain - source voltage (v) figure 12. soa, safe operation area t j(max) =150 a =25 gs =4.5v single pulse dut on 1*mrp board r ds(on) limited dc p w =10s p w =1s p w =100 ms p w =10ms p w =100 s p w =1ms
dm c1029ufdb document number: ds 37710 rev. 2 - 2 6 of 9 www.diodes.com february 2015 ? diodes incorporated dm c1029ufdb new product typical characteristics - p - channel 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 0 1 2 3 4 5 i d , drain current (a) v ds , drain - source voltage (v) figure 13. typical output characteristic v gs =1.2v v gs =1.5v v gs =1.8v v gs =2.0v v gs =2.5v v gs =4.5v v gs =3.0v v gs =8.0v 0 2 4 6 8 10 12 14 16 18 20 0 0.5 1 1.5 2 2.5 3 i d , drain current (a) v gs , gate - source voltage (v) figure 14. typical transfer characteristic v ds = - 5.0v t a = - 55 a =25 a =85 a =125 a =150 ds(on) , drain - source on - resistance ( ? d , drain - source current (a) fig ure 15. typical on - resistance vs drain current and gate voltage v gs = - 4.5v v gs = - 2.5v v gs = - 1.8v 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 1 2 3 4 5 6 7 8 r ds(on) , drain - source on - resistance ( ? gs , gate - source voltage (v) figure 16. typical transfer characteristic i d = - 1.0a i d = - 3.2a i d = - 3.6a 0.02 0.025 0.03 0.035 0.04 0.045 0.05 1 3 5 7 9 11 13 15 17 19 21 r ds(on) , drain - source on - resistance ( ? d , drain current (a) figure 17. typical on - resistance vs drain current and temperature v gs = - 4.5v t a = - 55 a =25 a =85 a =125 a =150 r ds(on) , drain - source on - resistance (normalized) t j , junction temperature ( gs = - 4.5v, i d = - 5.0a v gs = - 2.5v, i d = - 3.0a
dm c1029ufdb document number: ds 37710 rev. 2 - 2 7 of 9 www.diodes.com february 2015 ? diodes incorporated dm c1029ufdb new product 0.02 0.03 0.04 0.05 0.06 0.07 - 50 - 25 0 25 50 75 100 125 150 r ds(on) , drain - source on - esistance ( ? j , junction temperature ( gs = - 2.5v, i d = - 3.0a v gs = - 4.5v, i d = - 5.0a 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 - 50 - 25 0 25 50 75 100 125 150 v gs(th) , gate theshold voltage (v) t j , junction temperature ( d = - 250 a i d = - 1ma 0 2 4 6 8 10 12 14 16 18 20 0 0.3 0.6 0.9 1.2 1.5 i s , source current (a) v sd , source - drain voltage (v) figure 21. diode forward voltage vs. current v gs =0v t a =25 a = - 55 a =85 a =125 a =150 c t , junction capacitance (pf) v ds , drain - source voltage (v) figure 22. typical junction capacitance f=1mhz c iss c oss c rss 0 2 4 6 8 0 5 10 15 20 v gs (v) qg (nc) figure 23. gate charge v ds = - 6v, i d = - 4.3a 0.01 0.1 1 10 100 0.01 0.1 1 10 100 i d , drain current (a) v ds , drain - source voltage (v) figure 24. soa, safe operation area r ds(on) limited t j(max) =150 a =25 gs =4.5v single pulse dut on 1*mrp board dc p w =10s p w =1s p w =10ms p w =100 s p w =1ms p w =100ms
dm c1029ufdb document number: ds 37710 rev. 2 - 2 8 of 9 www.diodes.com february 2015 ? diodes incorporated dm c1029ufdb new product package outline dimensions please see ap02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. suggested pad layout please see ap02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. 0.001 0.01 0.1 1 1e - 05 0.0001 0.001 0.01 0.1 1 10 100 1000 r(t), transient thermal resistance t1, pulse duration time (sec) figure 25. transient thermal resistance r ja (t)=r(t) * r ja r ja =171 u - dfn2020 - 6 type b dim min max typ a 0.545 0.605 0.575 a1 0 0.05 0.02 a3 ? ? ? ? b 0.20 0.30 0.25 d 1.95 2.075 2.00 d ? ? ? ? d2 0.50 0.70 0.60 e ? ? ? ? e 1.95 2.075 2.00 e2 0.90 1.10 1.00 f ? ? ? ? l 0.25 0.35 0.30 z ? ? ? ? all dimensions in mm dimensions value (in mm) z 1.67 g 0.20 g1 0.40 x1 1.0 x2 0.45 y 0.37 y1 0.70 c 0.65 seating plane d e pin#1 id l b d2 e2 e a1 a a3 f z f d g g y c z y1 x2 x1 g1
dm c1029ufdb document number: ds 37710 rev. 2 - 2 9 of 9 www.diodes.com february 2015 ? diodes incorporated dm c1029ufdb new product important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other c hanges without further notice to this document and any product described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorporated do es not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemni fy and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized applicat ion. products described herein may be covered by one or more united states, international or foreign patents pending. product nam es and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this doc ument is written in english but may be translated into multiple languages for reference. only the english version of this do cument is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or s ystems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect its safety or effectiven ess. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related re quirements concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 201 5 , diodes incorporated www.diodes.com
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